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BLF3G21-30
UHF power LDMOS transistor
Rev. 01 -- 14 February 2007 Product data sheet
1. Product profile
1.1 General description
30 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz.
Table 1. Typical class-AB RF performance IDq = 450 mA; Th = 25 C in a common source test circuit. Mode of operation CW Two-tone f (MHz) 2000 2000 PL (W) 36 30 0.1 to 10 Table 2. Typical class-A RF performance IDq = 1 A; Th = 25 C in a modified PHS test fixture. Mode of operation PHS f (MHz) 1880 to 1920 PL(AV) (W) 9 Gp (dB) 16 D (%) 20 ACPR600 (dBc) -75 Gp (dB) 12.5 13.5 13.8 D (%) 43 35 IMD3 (dB) -26 PL(1dB) (W) 36 -
< -50 -
CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling.
1.2 Features
I Excellent back-off linearity I Typical PHS performance at a supply voltage of 26 V and IDq of 1 A: N Average output power = 9 W N Gain = 16 dB (typ) N Efficiency = 20 % N ACPR600 = -75 dBc I Easy power control I Excellent ruggedness I High power gain I Excellent thermal stability I Designed for broadband operation (HF to 2200 MHz)
NXP Semiconductors
BLF3G21-30
UHF power LDMOS transistor
I No internal matching for broadband operation I ESD protection
1.3 Applications
I RF power amplifiers for GSM, PHS, EDGE, CDMA and W-CDMA base stations and multicarrier applications in the HF to 2200 MHz frequency range I Broadcast drivers
2. Pinning information
Table 3. Pin 1 2 3 Pinning Description drain gate source
[1]
Simplified outline
1 3 2
Symbol
1
2 3
sym112
[1]
Connected to flange
3. Ordering information
Table 4. Ordering information Package Name BLF3G21-30 Description flanged LDMOST ceramic package; 2 mounting holes; 2 leads Version SOT467C Type number
4. Limiting values
Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VGS ID Tstg Tj Parameter drain-source voltage gate-source voltage drain current storage temperature junction temperature Conditions Min -65 Max 65 15 4.5 +150 200 Unit V V A C C
BLF3G21-30_1
(c) NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 -- 14 February 2007
2 of 12
NXP Semiconductors
BLF3G21-30
UHF power LDMOS transistor
5. Thermal characteristics
Table 6. Rth(j-c) Rth(j-h)
[1] [2]
Thermal characteristics Conditions Th = 25 C; PL(AV) = 15 W
[1] [2]
Symbol Parameter thermal resistance from junction to case
Typ Unit 1.6 2.1 K/W K/W
thermal resistance from junction to heatsink Th = 25 C; PL(AV) = 15 W
Thermal resistance is determined under specified RF operating conditions Depending on mounting condition in application
6. Characteristics
Table 7. Characteristics Tj = 25 C unless otherwise specified. Symbol Parameter V(BR)DSS drain-source breakdown voltage VGS(th) IDSS IDSX IGSS gfs RDS(on) Crs drain leakage current drain cut-off current gate leakage current transfer conductance drain-source on-state resistance feedback capacitance Conditions VGS = 0 V; ID = 0.7 mA Min 65 2.0 9 Typ 3 0.3 1.7 Max Unit 3.0 5 11 V V A A nA S pF
gate-source threshold voltage VDS = 10 V; ID = 70 mA VGS = 0 V; VDS = 28 V VGS = VGS(th) + 9 V; VDS = 10 V VGS = 15 V; VDS = 0 V VDS = 10 V; ID = 2.5 A VGS = VGS(th) + 9 V; ID = 2.5 A VGS = 0 V; VDS = 28 V; f = 1 MHz
7. Application information
Table 8. Application information VDS = 26 V; Th = 25 C unless otherwise specified. Symbol Gp RLin D IMD3 Parameter power gain input return loss drain efficiency third order intermodulation distortion Conditions PL(PEP) = 30 W PL(PEP) = 30 W PL(PEP) = 30 W PL(PEP) = 30 W PL(PEP) < 10 W PL = PL(1dB) = 36 W PL = PL(1dB) = 36 W PL(AV) = 9 W PL(AV) = 9 W Min 12.5 32 Typ 13.5 -16 35.0 -26 < -50 12.5 43 16 20 Max -11 -23 Unit dB dB % dBc dBc dB % dB % Mode of operation: Two-tone CW (100 kHz tone spacing); f = 2000 MHz; IDq = 450 mA
Mode of operation: one-tone CW; f = 2000 MHz; IDq = 450 mA Gp D Gp D
BLF3G21-30_1
power gain drain efficiency power gain drain efficiency
Mode of operation: PHS; f = 1900 MHz; IDq = 1 A
(c) NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 -- 14 February 2007
3 of 12
NXP Semiconductors
BLF3G21-30
UHF power LDMOS transistor
7.1 Ruggedness in class-AB operation
The BLF3G21-30 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 26 V; f = 2200 MHz at rated load power.
15 Gp (dB) 13
001aaf790
50 d (%) 40
001aaf791
11
30
9
20
7
10
5 10-1
1
10 PL (W)
102
0 10-1
1
10 PL (W)
102
VDS = 26 V; IDq = 450 mA; Th = 25 C; f = 2000 MHz
VDS = 26 V; IDq = 450 mA; Th = 25 C; f = 2000 MHz
Fig 1. Power gain as function of CW load power; typical values
15 Gp (dB) 13 Gp
001aaf792
Fig 2. Drain efficiency as function of CW load power; typical values
0 IMD (dBc) -20
001aaf793
50 d (%) 40
11
30 -40
9
20 IMD3 -60
7
D
10
IMD5 IMD7
5 10-1
1
10 PL(PEP) (W)
102
0
-80 10-1
1
10 PL(PEP) (W)
102
VDS = 26 V; IDq = 450 mA; Th 25 C; f1 = 2000 MHz; f2 = 2000.1 MHz
VDS = 26 V; IDq = 450 mA; Th 25 C; f1 = 2000 MHz; f2 = 2000.1 MHz
Fig 3. Two-tone power gain and drain efficiency as functions of peak envelope load power; typical values
Fig 4. Two-tone intermodulation distortion as function of peak envelope load power; typical values
BLF3G21-30_1
(c) NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 -- 14 February 2007
4 of 12
NXP Semiconductors
BLF3G21-30
UHF power LDMOS transistor
-10
(1)
001aaf794
102 Coss C (pF) 10 Ciss
001aaf795
ACPR (dB) -50
(2) (3)
Crss -90
(6) (7)
1
(4)
(5)
-130 -1.0
-0.5
10-1 0 0.5 f (MHz) 1.0 0 10 20 30 40 50 VDS (V)
(1) 192 kHz channel bandwidth (2) -ACPR300 at 192 kHz bandwidth (3) +ACPR300 at 192 kHz bandwidth (4) -ACPR600 at 192 kHz bandwidth (5) +ACPR600 at 192 kHz bandwidth (6) -ACPR900 at 192 kHz bandwidth (7) +ACPR900 at 192 kHz bandwidth VDS = 26 V; IDq = 1000 mA; Th 25 C; fc = 1900 MHz; PL(AV) = 9 W
Fig 5. ACPR performance under PHS conditions, measured in application board
5 Zi () 4
001aaf796
Fig 6. Ciss, Crss and Coss as functions of drain supply voltage; typical values
6 ZL () 2
001aaf797
3 Xi 2 -2
RL
XL 1 Ri 0 1.8 1.9 2.0 2.1 f (GHz) 2.2 -6 1.8 1.9 2.0 2.1 f (GHz) 2.2
VDS = 26 V; IDq = 450 mA; PL = 45 W; Th 25 C
VDS = 26 V; IDq = 450 mA; PL = 45 W; Th 25 C
Fig 7. Input impedance as function of frequency (series components); typical values
Fig 8. Load impedance as function of frequency (series components); typical values
BLF3G21-30_1
(c) NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 -- 14 February 2007
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Product data sheet Rev. 01 -- 14 February 2007
(c) NXP B.V. 2007. All rights reserved. BLF3G21-30_1
8. Test information
NXP Semiconductors
F1 R2
Vdd
R1 C5 L4 C1 L1 L2 L3 C2 L5 L6 C4 L7 L8 L9
Vgate
C6 L12
C11
C12
C13
C14
C15
C16
C10 L10 L14 L11 C7 L13 L15 C8
50 input
C9 L16
50 output
001aaf798
UHF power LDMOS transistor
BLF3G21-30
6 of 12
Fig 9. Class-AB test circuit for 2 GHz
NXP Semiconductors
BLF3G21-30
UHF power LDMOS transistor
50 mm
50 mm
60 mm
PH98072 IN
PH98073 OUT
C15 C6 C16 R1 C5 F1
C14
C13
C11
+
R2 C10
C12
50 input
C1 C2 C4 C7
C9 C8
50 output
PH98072 IN
PH98073 OUT
001aaf799
The components are situated on one side of the copper-clad Printed-Circuit Board (PCB) with Teflon dielectric (r = 6.15); thickness = 0.64 mm. The other side is unetched and serves as a ground plane. See Table 9 for a list of components.
Fig 10. Component layout for 2 GHz class-AB test circuit
BLF3G21-30_1
(c) NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 -- 14 February 2007
7 of 12
NXP Semiconductors
BLF3G21-30
UHF power LDMOS transistor
Table 9. C1, C9
List of components (see Figure 9 and Figure 10) Description multilayer ceramic chip capacitor Tekelec variable capacitor; type 37271 multilayer ceramic chip capacitor tantalum SMD capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor electrolytic capacitor ferrite SMD bead stripline stripline stripline stripline stripline stripline stripline stripline stripline stripline stripline stripline stripline stripline stripline metal film resistor
[3] [3] [3] [3] [3] [3] [3] [3] [3] [3] [3] [3] [3] [3] [3] [2] [1] [2]
Component C2, C4, C7, C8 C5, C10 C6, C13, C14, C15 C11 C12 C16 F1 L1 L2 L3 L4, L12 L5 L6 L7 L8 L9 L10 L11 L13 L14 L15 L16 R1, R2
[1] [2] [3]
Value 11 pF 0.6 pF to 4.5 pF 12 pF 4.5 F; 50 V 1 nF 100 nF 100 F; 63 V
Dimensions
Catalogue No.
2222 581 16641 2222 037 58101 8DS3/3/8/9-4S2 4330 030 36301 13 mm x 0.9 mm 2 mm x 0.9 mm 15 mm x 1.7 mm 37 mm x 0.9 mm 6 mm x 1.7 mm 13 mm x 2.9 mm 6 mm x 15.8 mm 6 mm x 26 mm 12 mm x 1.9 mm 7.4 mm x 2.7 mm 3 mm x 0.9 mm 4.15 mm x 0.9 mm 2.5 mm x 2.5 mm 2.8 mm x 0.9 mm 14 mm x 0.9 mm 2322 156 11009
50 50 34.3 50 34.3 23.6 5.6 3.5 31.9 24.9 50 50 26.3 50 50 10 ; 0.6 W
American Technical Ceramics type 100B or capacitor of same quality American Technical Ceramics type 100A or capacitor of same quality The striplines are on a double copper-clad Printed-Circuit Board (PCB) with Teflon dielectric (r = 6.15); thickness = 0.64 mm
BLF3G21-30_1
(c) NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 -- 14 February 2007
8 of 12
NXP Semiconductors
BLF3G21-30
UHF power LDMOS transistor
9. Package outline
Flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT467C
D
A F
3
D1
U1 q C
B c
1
E1 H U2 E
A
p
w1 M A M B M
2
b w2 M C M Q
0
5 scale
10 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inch A 4.67 3.94 b 5.59 5.33 c 0.15 0.10 D 9.25 9.04 D1 9.27 9.02 E 5.92 5.77 0.233 0.227 E1 5.97 5.72 F 1.65 1.40 H 18.54 17.02 0.73 0.67 p 3.43 3.18 Q 2.21 1.96 q 14.27 U1 20.45 20.19 U2 5.97 5.72 w1 0.25 w2 0.51
0.184 0.220 0.006 0.155 0.210 0.004
0.364 0.365 0.356 0.355
0.235 0.065 0.225 0.055
0.135 0.087 0.805 0.235 0.562 0.010 0.020 0.125 0.077 0.795 0.225
OUTLINE VERSION SOT467C
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 99-12-06 99-12-28
Fig 11. Package outline SOT467C
BLF3G21-30_1 (c) NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 -- 14 February 2007
9 of 12
NXP Semiconductors
BLF3G21-30
UHF power LDMOS transistor
10. Abbreviations
Table 10. Acronym CDMA EDGE GSM HF LDMOS LDMOST PHS RF SMD UHF VSWR W-CDMA Abbreviations Description Code Division Multiple Access Enhanced Data rates for the GSM Evolution Global System for Mobile communications High Frequency Laterally Diffused Metal Oxide Semiconductor Laterally Diffused Metal-Oxide Semiconductor Transistor Personal HandyPhone System Radio Frequency Surface-Mount Device Ultra High Frequency Voltage Standing-Wave Ratio Wideband Code Division Multiple Access
11. Revision history
Table 11. Revision history Release date 20070214 Data sheet status Product data sheet Change notice Supersedes Document ID BLF3G21-30_1
BLF3G21-30_1
(c) NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 -- 14 February 2007
10 of 12
NXP Semiconductors
BLF3G21-30
UHF power LDMOS transistor
12. Legal information
12.1 Data sheet status
Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet
[1] [2] [3]
Product status[3] Development Qualification Production
Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification.
Please consult the most recently issued document before initiating or completing a design. The term `short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.
12.2 Definitions
Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.
malfunction of a NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.
12.3 Disclaimers
General -- Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes -- NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use -- NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.
13. Contact information
For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: salesaddresses@nxp.com
BLF3G21-30_1
(c) NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 -- 14 February 2007
11 of 12
NXP Semiconductors
BLF3G21-30
UHF power LDMOS transistor
14. Contents
1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Application information. . . . . . . . . . . . . . . . . . . 3 Ruggedness in class-AB operation. . . . . . . . . . 4 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Contact information. . . . . . . . . . . . . . . . . . . . . 11 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'.
(c) NXP B.V. 2007.
All rights reserved.
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 14 February 2007 Document identifier: BLF3G21-30_1

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